XPS Depth Profile Study of Sprayed Ga<sub>2</sub>O<sub>3</sub> Thin Films
نویسندگان
چکیده
Ga2O3 thin films were fabricated by spray pyrolysis method using gallium acetylacetonate as source material and water oxidizer. The annealed at 450°C for 60 minutes in argon atmosphere. X-ray photoelectron spectroscopy (XPS) depth profile studies carried out to analyze the stoichiometry composition of sprayed as-deposited films. Surface layers inner found nearly stoichiometric.
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ژورنال
عنوان ژورنال: Engineering
سال: 2023
ISSN: ['2096-0026', '2095-8099']
DOI: https://doi.org/10.4236/eng.2023.158035